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AlN/nitrided sapphire and AlN/non-nitrided sapphire hetero-structures epitaxially grown by pulsed laser deposition (PLD) have been carried out. The characterizations find that when the nitridation process is implemented on sapphire substrates, the properties of AlN/sapphire hetero-structures are improved significantly. It is also identified that very smooth AlN surface with the root-mean-square surface...
∼500 nm-thick c-plane and a-plane GaN epitaxial films on c-plane and r-plane sapphire substrates by pulsed laser deposition have been grown and explored. The ∼500 nm-thick c-plane GaN epitaxial films grown on c-plane sapphire substrates show high crystalline quality with full-width at half-maximum (FWHM) for GaN(0002) and GaN(10–12) X-ray rocking curves (XRCs) of 0.20° and 0.37°, respectively, very...
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