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A gold-indium isothermal solidification technique has been developed for die bonding. Both silicon on silicon and silicon on alloy 42 (chip size 2 × 2 mm2) are investigated. For silicon on silicon, the bonding is performed at 200°C within 30 sec. The bonds can withstand 1,500 cycles of temperature cycle between −65°C and 150°C without any degradation. For silicon on alloy 42, the bonding is done at...
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