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We propose a novel formation process of a Ge nitride interfacial layer (NIL) and demonstrate successful Ge-nMISFETs operation with NIL, for the first time. We also examine the impact of NIL on the performance of the nMISFETs. It is found that, compared to an oxide interfacial layer (OIL), NIL is quite effective in suppressing the generation of positive fixed charges and electron trapping centers in...
Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There are two directions for introducing SiGe or Ge channels into Si CMOS platform. One is to use SiGe or Ge global substrates and the other is to form SiGe or Ge-channel regions...
It has been well recognized that continuous increase in drive current is mandatory for successive growth of future CMOS LSIs. This means that the mobility enhancement has to keep being pursued in each technology node. For this purpose, a variety of local strain and global strain techniques have recently been developed and some of them have already been implemented in real products as presented in...
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