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This paper presents the design and implementation of a new integrated circuit (IC) that is suitable for driving the new generation of high-frequency GaN HFETs. The circuit, based upon a resonant switching transition technique, is first briefly described and then discussed in detail, focusing on the design process practical considerations. A new level-shifter topology, used to generate the zero and...
The paper describes a high-speed high efficiency H-bridge circuit based upon Gallium nitride (GaN) Heterostructure Field-Effect Transistor (HFET) devices as power switches. The use of a new designed driver integrated circuit (IC) makes it possible to exploit the capabilities and advantages of GaN technology in power electronic applications by means of a smart and convenient implementation. Low power...
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