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AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOSHFETs) with Al 2 O 3 gate oxide which was deposited by atomic layer deposition (ALD) were fabricated and their performance was then compared with that of AlGaN/GaN MOSHFETs with HfO 2 gate oxide. The capacitance (C)–voltage (V) curve of the Al 2 O 3 /GaN MOS diodes showed a lower...
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