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A novel device concept, SiGe tunnel source(PNPN) based on the principle of band to band tunneling is reported in this paper. The SiGe source PNPN tunneling FET shows steep sub-threshold swing and higher turn on current than SiGe source PIN tunnel FET. For achieving high turn on current, the SSOI is also investigated in SiGe tunnel source device.
With aggressive MOSFET scaling, short channel effects (DIBL and VTH roll-off), off-state and gate leakage, parasitic capacitance and resistance severely limit the device performance. These, in addition to VDD scaling limitation and high sub-threshold swing (Gt60mv/dec) give rise to high IOFF and make power dissipation, both dynamic and static, an enormous challenge, especially for low power/low current...
As MOSFET is scaled below 90 nm, many daunting challenges arise. Short channel effects (DIBL and VTH roll-off), off-state and gate leakage, parasitic capacitance and resistance severely limit the performance of these transistors. These, in addition to VDD scaling limitation and high sub-threshold swing (>60 mv/dec) give rise to high IOFF and make power dissipation an enormous challenge, especially...
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