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In recent years, a major challenge facing beamline implant tools is the low productivity of high dose p-type boron doping. A significant aspect of this challenge is the limited ion source life obtained when running boron trifluoride (BF3), the primary feed gas for boron doping. Use of BF3 often results in redistribution of tungsten within the arc chamber and source area due to the halogen cycle. Presented...
Carbon implant has become one of the major co-implant steps in the fabrication of advanced semiconductor devices due to its proven effectiveness in controlling and reducing Transient Enhanced Diffusion (TED) in ultra-shallow junction formation. Carbon dioxide (CO2) is still widely used as the feed gas for carbon implantation. However, it is well known that the high concentration of oxygen from CO2...
Ion implantation is known for its precise control and reproducibility of doping, enabling it to become one of the main approaches for high-efficiency cell manufacturing in the solar industry. Among the dopant materials, boron doping often represents the largest challenge to productivity as the efficiency of the traditional doping material, boron trifluoride (BF3), is always low. This paper presents...
Ion implantation of germanium in silicon wafers is often troubled by reduced ion source life due to use of germanium tetrafluoride (GeF4) as a source material. The problem is mainly due to tungsten re-deposition, a result of a fluorine-induced halogen cycle initiated within the ion source. The halogen cycle is particularly pronounced in the case of GeF4 by easy fragmentation of the molecule, as well...
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