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This study showed that substrate rotation plays an important role in the growth of high-quality β-FeSi 2 epitaxial film on hydrogen terminated Si (111) substrate using molecular beam epitaxy (MBE). The present work elucidated the substrate rotation effects on morphology, thickness, and purity. Results verified that substrate rotation is essential to grow thicker epilayers with better morphology...
Ar-H 2 plasma arc melting of Nb-based alloy revealed that elimination of Ti, Fe and Al has a diffusion nature, controlled by diffusion in the gas and, at lower Al and Fe concentrations, by diffusion in the metal. Hydrogen addition to the plasma gas resulted in a remarkably higher removal rate of the impurities. Shaking of the specimen is effective in accelerating the process at lower Al and...
Thermodynamic calculations were carried out to simulate impurity removal from refractory metals by Ar-H 2 plasma are melting. The calculations enable us to estimate the impurity removal degree. Numerical agreement between the experimental and calculated results for the base metals Ti, V, Zr, Nb to Ta improve in that order. Addition of H 2 to the plasma gas results in faster transfer...
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