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Fabrication and performance of high-frequency 0.3-μm gate-length depletion-mode metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMT) grown by Metalorganic Chemical Vapor Deposition (MOCVD) on n-type silicon substrates is reported. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. A maximum trans-conductance...
Hot carrier (HC) reliability of gate-all-around twin Si nanowire field effect transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2 nm thickness show worse hot carrier reliability. The worst VD for 10 years...
Sub 5 nm tri-gate nanowire MOSFET is successfully developed with good uniformity by using conventional technology in the SOI structure. Performance of the poly Si channel is compared with that of the single Si channel. On-state current of n-FET has attained to 802 uA/um for single Si channel, while 471 uA/um for poly Si channel, which is 60 % of performance of the single Si channel at LG ~ 5 nm due...
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