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Initial process of Co/6H-SiC(0001) contact has been intended to study using Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM). Considering that 6H-SiC(0001) has a polar surface i.e. Si or C terminated face, we first tried to study Co deposition on either Si(111)7 7 or a carbon film. Co silicide like CoSi 2 starts to be formed when Co is deposited on a clean Si surface...
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