The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit...
The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer...
In this report we present recent results for MOCVD growth of high indium content InGaN films on ZnO substrates. Growth was attempted on both bulk ZnO as well as ZnO epilayers grown on sapphire by MOCVD. ZnO is an attractive alternative substrate for III-Nitrides because of its superior lattice match: specifically ZnO is perfectly matched with In0.18Ga0.82N and low cost of substrates. Stable InGaN...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.