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Several generations of high power, lateral, linear mode, intrinsically triggered 4H-SiC photoconductive semiconductor switch designs and their performance are presented. These switches were fabricated from high purity semi-insulating 4H-SiC samples measuring $12.7~{\rm mm}\,\,\times \,\,12.7~{\rm mm}\,\,\times \,\,0.36$ mm and were able to block dc electric fields up to 370 kV/cm with leakage currents...
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