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We have studied free-exciton photoluminescence (PL) properties of spherical GaAs nanocrystals embedded in SiO 2 matrices fabricated by ion-beam synthesis. Under resonant excitation at energies within the free-exciton PL band, LO-phonon structures appear in the PL hole-burning spectra. By deuterium implantation to GaAs nanocrystals, both the impurity-related PL band and the LO-phonon-assisted...
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