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Low drive-current and extremely wide temperature (from -45 to 105°C) operation were demonstrated in 10-Gb/s directly-modulated 1.3-μ AlGaInAs-MQW BH-DFB lasers with a new DH structure having a p-InP cladding layer grown by a lateral-growth technique.
We have developed the first 1.3-mum AlGaInAs-MQW-FP-LD with Ru-doped InP buried heterostructure by narrow-stripe selective MOVPE. SIMS measurements revealed that the Ru-doped InP suppressed Zn diffusion from Zn-doped InP in comparison with Fe-doped InP. The LD operates up to 170degC. 10-Gb/s operation up to 120degC and more than 3500-hour reliability under 85-degC APC test has been successfully achieved
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