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We report record RF performance in 40nm-gate GaN-HEMT technology. Through vertical scaling in an AlN/GaN/AlGaN double heterojunction (DH) HEMT structure and reduction of access resistance using MBE re-growth of n+-GaN ohmic contacts, fully-passivated 40-nm devices exhibited excellent DC characteristics, such as an Ron of 0.81Ω·mm, an Idmax of 1.61A/mm, a BVoff of 42V, and a peak extrinsic gm of 723mS/mm,...
We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology, the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 μm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14...
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