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In this work, we report on developments toward ultra-low noise amplifier modules for the WR4 frequency range, covering 170–260 GHz. The amplifiers in question utilize 35 nm HEMT transistors on a 50 µm thick InP substrate, and were developed at NGC. While recent work in this frequency band has demonstrated the usefulness and advanced technology of utilizing integrated waveguide transitions fabricated...
In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 ??m 15 ??m InP HBT device with maximum frequency of oscillation (fmax) greater than 500 GHz and of 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 ?? 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain...
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