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Single phase Sr 2 Si layers were successfully grown on Mg 2 Si/Si substrates for the first time. The Sr 2 Si layers are formed by an interdiffusion process between the deposited Sr atoms and Mg 2 Si/Si substrates. It has been confirmed that the formation of the SrSi and SrSi 2 phases was suppressed when the layers were grown on Mg 2 Si/Si substrates...
Mg 2 Si 1−x Ge x layers were grown on silicon–germanium substrates by heat treatment of the substrates in Mg vapor. The layers were grown by an interdiffusion process between the deposited Mg atoms and the substrates. It has been demonstrated that smooth and continuous layers can be grown with an abrupt layer/substrate interface, and no Kirkendall void is formed. It was found...
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