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We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.
We report the design, fabrication and characterization of large-cross-section GaN waveguide directional couplers with mode-converting tapers. A positive RIE lag effect has been shown to significantly reduce overall device footprint.
A versatile maskless process flow was developed to fabricate a GaN-based individually-addressable LED array. This new fabrication approach combines CMOS-controlled micro-LED writing and silver nanoparticle inkjet printing. An array filling factor of 99% was achieved.
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