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The light-extraction efficiency (LEE) of GaN-based light-emitting diodes (LEDs) is strictly limited by total internal reflection (TIR) and Fresnel reflection. In this paper, we sought to utilize hybrid Photonic Crystals (PhCs) with different etched depth to increase the LEE of GaN-based LEDs. The results showed that the structure proposed here could decrease not only the TIR but also the Fresnel reflection...
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