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Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and allows the realization of novel asymmetric device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100 % compositionally modulated Si/Ge axial heterostructure nanowires...
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