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In this work, graphene/InN and graphene/MoS2 thin film heterostructure based diode sensors are demonstrated. InN thin film is grown on GaN/sapphire substrate, MoS2 is synthesized on SiO2 by direct reaction between Mo and S, and CVD grown graphene is then transferred on either of them to make a graphene/InN(MoS2) diode structure. Electrical characterization of both devices shows good rectifying behavior...
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