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A 1.5 mu m GaInAsP/InP laser is monolithically integrated with a photodiode. The laser is isolated from the photodiode by an etched groove formed by reactive ion etching. Ethane and hydrogen gases are used as an etchant of reactive ion etching instead of chlorinated gas. The threshold current of the laser under CW operation and the sensitivity of the monitor photodiode are 57 mA and 0.24 A/W, respectively...
A high-performance 1.55 mu m GaInAsP/InP mass transport laser diode has been fabricated on a semi-insulating InP substrate to reduce parasitic capacitance at the bonding pad. A small signal 3 dB modulation frequency of 8.5 GHz has been achieved at the light output power of 4 mW.<<ETX>>
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