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GaInAsP/InP buried-heterostructure (BH) optical intensity modulators have been fabricated by the use of Fe-doped semi-insulating InP burying layers. The reduction of a parasitic capacitance due to the semi-insulating burying layers realised a wide modulation bandwidth of 11.2GHz. At a wavelength of 1.53/?m, an attenuation ratio of 20 dB at 26?C was achieved with an applied voltage of ?8.5 V.
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