The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel fabrication process has been demonstrated to create cost-effective, high-yield, and high-quality integrated passive devices (IPDs) on GaAs substrate. Various materials and processing approaches to thin film resistors (TFRs), spiral inductors, and metal-insulator-metal (MIM) capacitors have been evaluated in terms of cost, yield, and device performance. To further reduce the total cost, SU-8...
Conclusions IPD technology is paramount in furthering the performance and integration of functionality as well as shrinking in size in RF front-end systems. The proposed fabrication process enables a high performance integration of passive technology; the reliable NiCr TFR, spiral inductor with high Q factor, and MIM capacitor of compact size with high yield are realized by the IPD technology, and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.