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The effect of various forms of Ni contaminants on the electrical properties of a silicon grain‐boundary (GB) formed by direct bonding technology has been investigated in this paper. It is found that compared to that of the clean GB, the density of interface states and their majority carrier capture cross‐section for the as‐contaminated GB is significantly increased, due to the interaction of Ni impurities...
The effect of hydrogenation on the electrical property of a clean grain boundary (GB) in the p‐type direct silicon bonded (DSB) wafers has been investigated by current–voltage (I–V) and capacitance–voltage(C–V) deconvolution. It is found that compared to the as‐bonded GB, the energy distribution of interface states at the GB subjected to hydrogenation become shallower, and the hole capture cross‐section...
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