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CVD is used to prepare indium tin oxide (ITO)‐induced polycrystalline silicon thin films with SiH4 as the precursor. The growth of columnar polycrystalline silicon is shown. The sheet resistance (R□) of ITO‐induced Si thin films ranges from about 167.3 to 466.2 Ω/sq. Light absorption increases, as does the detected transmittance, by about 18.4% − 30.5% for wavelengths less than 500 − 700 nm.
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