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Micron-sized grains of gallium nitride (GaN) crystallizing in the Wurtzite phase were synthesized through a chemical reaction between gallium (Ga) metal and melamine (C 3 N 6 H 6 ). The reaction occurred at the temperature range from 1073 to 1473 K and the pressure range from 3.5 to 5.5 GPa. X-ray diffraction (XRD) and transmission electron microscopy (TEM) investigations showed...
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