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This paper presents detailed investigations on the direct-current (DC) characteristics of an AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility transistor (DH-HEMT) using two-dimensional numerical analysis. In this work, the hot-electron effect is taken into account and implemented in the hydrodynamic model. The results indicate that carrier transport in this kind of device exhibits...
The carrier transport properties of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs (DH-HEMTs) have been investigated. Previous hydrodynamic model exhibits significant discrepancies with the experimental results when used for simulating electrical properties of these DH-HEMTs. With the modification of low field mobility by taking into consideration several scattering mechanisms at InGaN/GaN interface,...
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