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InN was deposited on c-sapphire and GaN substrates using conventional and pulsed metalorganic vapor-phase epitaxy. The nucleation and evolution of thin film growth was investigated. Growth temperature, V/III molar ratio, and substrate material were varied for the two different growth modes (conventional vs. pulsed MOCVD). It was found that InN deposition was sensitive to V/III molar ratio and growth...
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