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The internal transitions of Be acceptors confined in the center of GaAs/AlAs multiple quantum wells are investigated by Raman and photoluminescence (PL) spectra. A series of Be δ‐doped GaAs/AlAs multiple quantum wells with doping at the well center and well widths ranging from 30 to 200 Å were grown on (100) GaAs substrates by molecular beam epitaxy. Both the Raman and PL spectra were measured at...
Ce‐doped silica films with various Ce concentrations were prepared via ion beam sputtering (IBS) and ion implantation. The samples containing 1.46 at.% Ce were annealed at various temperatures from 500 to 1100 °C in air ambient and a separate sample with the same Ce concentration was annealed at 1100 °C in nitrogen gas. The Ce‐related photoluminescence (PL) was observed for the samples and found to...
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