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TDPAC has been employed to study the local structure of implanted palladium in silicon utilizing 87-75 keV γ-γ cascade of probe nucleus 100Pd. The observed hyperfine parameters revealed the presence of Pd-V defect pair only in highly doped n-type silicon. A dumbbell structure with substitutional palladium and silicon vacancy as nearest neigbor is suggested for this defect.
181Hf and 111In ions were implanted into AlN-layers in order to investigate their immediate lattice site environment and its temperature dependence by means of the Perturbed Angular Correlation (PAC) technique. After rapid thermal annealing at 1273 K up to 50% of the probe atoms were incorporated on undisturbed lattice sites defined by an electric field gradient (EFG) of 33 MHz for In and...
Group III nitrides and other wide band-gap semiconductors like ZnO are very promising materials for application in optoelectronics. However, little is known about the recovery of lattice damage caused by ion implantation necessary to achieve lateral structuring. We use the PAC technique to study the behaviour of the Rare Earth isotope 172Lu(172Yb) after implantation. After annealing, a large fraction...
Proceedings of the 13th International Conference on Hyperfine Interactions and 17th International Symposium on Nuclear Quadrupole Interactions, HFI/NQI 2004, held in Bonn, Germany, 22-27 August, 2004 Researchers and graduate students interested in the Mössbauer Effect and its applications will find this volume indispensable. The volume presents the most recent developments in the methodology of...
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