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Zn 0.40 Mn 0.60 Se thin films were grown on GaAs (100) substrate by hot-wall epitaxy. The grown films had both NaCl structure and zincblende structure. Energy-dispersive X-ray analysis revealed that the Mn composition ratio of the grown ZnMnSe thin films was approximately 0.60 and this Mn composition ratio had no relation to the increase of the substrate temperature. However, it was...
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