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We have investigated photoluminescence (PL) of crystalline silicon-based layers sandwiched between SiO 2 barriers. We fabricate these structures on standard silicon on insulator (SOI) wafers realized by bonding techniques. Firstly, we realize silicon thin layers (50–200 nm) by thermal oxidation of the SOI free surfaces. At low temperature and under UV excitation, luminescence spectra is dominated...
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