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In this paper a methodology to predict single-event transient (SET) pulse characteristics is proposed. Analytical models and technology pre-characterization are used to estimate SET pulse-widths for different standard cells. The model uses graph analysis of the cell netlist to identify similar circuit structures for reduced computational complexity for the characterization of standard cells. The error...
For advanced fabrication technology nodes, novel single-event related failures are being observed. This paper details efforts to use 3D TCAD simulations to model these failure mechanisms and develop mitigation techniques for flip-flop designs. Simulation, as well as experimental, results are used to show validity of such an approach for future CMOS technologies.
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