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We report our initial result of bonding two 2in. silicon wafers using Sn-rich Sn–Au dual-layer structure that is produced by electroplating process. No flux is used in the bonding process. Comparing to Au-rich Au80Sn20 eutectic alloy, it is more difficult to achieve fluxless feature using Sn-rich Sn–Au alloys due to tin oxidation. In this initial effort, two samples are produced. The resulting Sn-rich...
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