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Erbium-doped amorphous aluminum oxide layers deposited on Si or oxidized silicon substrates are promising construction pieces for future monolytic integrated optoelectronics devices. In a novel high-vacuum chemical vapor deposition setup the alumina films are grown with high homogeneity on 4in. wafers with well controlled growth rate, chemical composition, and high deposition rates of up to 20nm/min...
Epitaxially grown Nd(0.5%):(Gd, Lu)2O3 and Er(0.6%):(Gd, Lu)2O3 waveguides deposited on Y2O3 by pulsed laser deposition, providing peak emission cross sections comparable with those of Lu2O3 bulk crystals, have been fabricated and structured. Rib waveguiding has been shown.
The aim of this work is to show that an efficient PL response can be achieved in Er-Yb codoped Al2O3 waveguides by controlling the Er and Yb relative concentrations and at the same time controlling the rare-earth distribution in the nanoscale.
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