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MOCVD TiSiN was evaluated as a barrier for Cu interconnects application. The TiSiN film was formed by SiH/sub 4/ soaking of MOCVD TiN. The TiSiN film showed improved wetting and adhesion to Cu as well as less stress hysteresis in its integration with Cu. The low stress hysteresis yields higher resistance to Cu void generation during hot storage testing. Electrical tests on DLM Cu test structures demonstrated...
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