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GaN Schottky diode radiation detectors were fabricated on a freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to . The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the...
GaN Schottky diode radiation detectors were fabricated on a 450-µm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices...
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