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This paper describes the design of a compact and highly repetitive pulsed power modulator based on semiconductor switches. Output specifications of the proposed modulator are as follows: variable output pulse voltage, 1-10 kV; width, 1-10 μs; pulse repetition rate (PRR), 1-50,000 pps; and average output power, 10 kW. The proposed solid-state pulsed power modulator has two main parts: an IGBT stack...
Strained-Si technology is the Holy Grail for present semiconductor industry and is used extensively to boost the device performance, recently. However, the limitation of strained-Si technology has greatly perplexed us and need to investigate in detail. In this work, the low temperature ballistic measurement enables us to discriminate the origin of mobility enhancement under stress from the reduction...
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