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Knowledge on doping effects is essential for fabrication of nanowire devices. While high doping levels may be required, nanowire growth can fail when doping is increased exceedingly. We report effects of Zn doping on different properties of GaAs nanowires, such as morphology, optical properties and growth rate. Nanowires with lower doping showed better and more consistent morphology while highly doped...
Summary form only given. Silicon carbide nanowires with junctions are considered to be of potential value in nanoelectronics. A simple method by catalyst-assisted vapor-liquid-solid reaction for producting Y-junction silicon carbide nanowires is described. The Y-junction silicon carbide nanowires are investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It...
Summary form only given. Large scale SiC/SiO2 nanowires have been synthesized on Si (100) by the reaction of methane with silica using iron as catalyst. The growth time was 10 mins and the growth temperature was around 1,250°C in a normal atmospheric pressure. Detailed investigation with scanning electron microscopy (SEM), energy-dispersed X-ray (EDX), X-ray diffraction (XRD) and transmission electron...
Hexagonal <roman>WO</roman>3 nanowires were prepared on Si substrate by thermal evaporation of <roman>WO</roman>3 powder. A single <roman>WO</roman>3 nanowire was assembled on a pair of Pt electrodes by electric field assembly. The electrical transport behavior indicates that the back-to-back SBs structure is formed, which show nonlinear and asymmetric I-V properties...
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