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We have designed and fabricated THz detectors based on excitation and rectification of radiation induced overdamped THz plasmons in InGaAs/GaAs HEMT structures. These plasma wave detectors were used to image the beam profile of THz gas laser operating at 1.63 THz with FWHM of 140 ??m. The images were recorded with deep sub-wavelength spatial resolution. This allowed to resolve a sub-wavelength shifts...
We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are...
A scalable nonlinear resistor model is proposed, which is suitable for epitaxial layer resistor on GaAs substrate commonly used in GaAs MMIC. Analytical expressions describing the geometry dependences of the model parameters are provided. The proposed scalable model, implemented into a circuit simulator, accurately predicts the DC, S parameter, and power performance of the resistors with various geometries...
A large signal model is proposed for GaAs epitaxial layer resistor, which can be used in resistor design, characterization and circuit simulation. The resistor I-V behavior can be excellently fitted by a hyperbolic tangent expression with only two model parameters. By taking into account the nonlinearities, frequency dispersion, and parasitic effect, the proposed model accurately predicts DC, small...
The impact of frequency dispersive effects on typical figures of merit is investigated in a distributed MMIC realized in 0.15 /spl mu/m GaAs pHEMT technology. A novel compact dispersion model, allowing for accurate simulation of both static and dynamic multiple time constant IV characteristics, is employed. In a comparison of measurement and simulation, the model is both validated and used to quantify...
The influence of the electron energy spectrum of solid-state thermionic devices on electronic efficiency is analyzed. Calculations are performed on both single and multibarrier GaAs/AlGaAs and InGaAs/InAlAs systems. Analysis reveals a wide barrier is desirable for single-barrier thermionic devices due to the associated sharpness in the electron energy spectrum. It is also shown that high electronic...
We observe that n-GaAs terahertz emitters with as-grown Be-doped low-temperature-grown (LTG)-GaAs layers exhibits greater radiation power than devices with or without undoped LTG-GaAs layers and explain it by the enhanced electric field in the surface depletion layer.
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