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Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
A new type of LiNbO/sub 3/ modulator to reduce the driving voltage and expand the bandwidth under the condition Z/sub 0/=50 Omega is proposed and designed. This modulator is constituted using a buried electrode in the buffer layer to match the microwave electric field with the light field.<<ETX>>
For highly efficient operation, a new type LiNbO/sub 3/ Mach-Zehnder intensity modulator using electrodes buried in the buffer layer was designed and fabricated. The modulator was designed considering velocity matching between light and microwave, microwave propagation loss and characteristic impedance Z/sub 0/ of 50 Omega . This modulator for a 1.5 mu m wavelength operates with a V/sub pi / of 3...
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