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A 2.5-GHz low power high gain and high linearity CMOS low noise amplifier (LNA) is presented. The modified derivative superposition (MDS) technique is employed to improve the linearity performance. The bulk-bias control of auxiliary transistor (AT) in MDS technique is used to extend the AT's bias control range. The current-reused topology is utilized to full-fill the low power consumption and high...
In this work, compatible CMOS-MEMS process with surface micromachining is investigated. Surface micromachining method for cantilever fabrication has been merged with conventional CMOS process, and release of MEMS structure is conducted after CMOS process. We designed polysilicon MEMS structures as well as CMOS devices and circuits on a monolithic sensor chip for the investigation of the influence...
In this work, a monolithic integrated MEMS resonator was fabricated and tested. Surface micromachining method was employed to fabricate the cantilever MEMS resonator after a standard 3 µm CMOS process. The wet release method with dilute HF solution was chosen and compared to the anhydrous HF vapor release process. A release-monitoring structure with polysilicon/Au cantilever array was used to determine...
For low power low voltage, low area applications, voltage references based on MOS transistors operating in subthreshold offer some attractive advantages over conventional bandgap-based structures. The lack of closed-form explicit expressions for the relationship between output and temperature for most subthreshold-based references makes it difficult to optimize performance and make quantitative comparisons...
This paper proposes a CMOS structure as a highly linear on-chip temperature sensor. As long as all transistors are in saturation, the output of the structure is a VDD independent voltage source that linearly expresses CMOS threshold voltage, and hence is approximately linear in temperature. A new sizing strategy is introduced following a combined analytical and numerical optimization approach, which...
This work focuses on a new compact 6-transistor CMOS temperature sensor with improved flexibility for achieving target temperature linearity with small die area and low power consumption. The temperature information is provided in a differential output voltage that is based upon the linear dependence of threshold voltage on temperature. Implemented in a 0.18μm process, simulation results indicate...
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