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Integrated circuits (ICs) undergo dimensional reduction and the functional unit of density dramatically increases, the reliability issue becomes more critical, especially with respect to three-dimensional (3D) silicon integration technology. Through-Silicon Vias (TSVs) technology is one of the most prominent feature used for interconnecting between chips. Since TSVs contain interfaces of heterogeneous...
Through Silicon Via(TSVs) technology is one of the most prominent feature in future microelectronic devices packaging. Since TSVs contain the interfaces of heterogeneous materials that have high CTE mismatch, and would hence produce large thermal stresses under temperature loading, often leading to mechanical failure. A failure stress mathematical model is established and the algorithm of mathematical...
Three dimensional (3D) integration technology, involving the vertical stacking of multiple chips using through-silicon vias (TSVs), has emerged as a promising solution to improve the performance of microelectronic devices. However, the complex structures and the consequent increase in power density exacerbate the challenge of thermal management in the device including multiple chips. In order to ensure...
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