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GaN nanorods have drawn attention as possible crystalline structures on which to form InGaN active regions for LEDs, making use of the m-planes that form the sidewalls of the rods. In this paper, we describe such nanorods as well as nanosheets with increased m-plane surface area formed on c-plane sapphire. Non polar crystalline planes on nanorods and nanosheets are expected to lead to more efficient...
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