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Integrating power amplifiers (PAs) is one of the challenges for system-on-chip (SOC) applications due to the low breakdown voltage of nanoscale CMOS devices. This paper presents the study and design of three class-E PAs based on lumped element load transformation networks (LTNs) in 90nm CMOS process for LTE band, i.e. 2.55 GHz. The simulation results show that the designed PAs can deliver an output...
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