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In this paper, the 500MHz band low power rectenna with high sensitivity characteristic is described. The rectenna is consisting of the folded dipole antenna with a 1.6kΩ impedance and the Cockcroft-Walton type rectifier for improvement of the rectification efficiency and the output dc voltage. Furthermore an L-Type LPF is added to reduce the negative influence due to the junction capacitance of the...
Gate controlled diodes (GCD) and rectifiers using the GCD with the different threshold voltage (Vt) of the MOS by the ion-implantation were fabricated with 0.18um CMOS technology. The DC characterization of the GCD revealed that the turn on voltage of the GCD is reduced and becomes lower than the Schottky Barrier Diode (SBD) when the Vt of the MOS is reduced and there exist the bulk leakage pass of...
For realization of the RF energy harvesting of the ultra low power RF input, the gate controlled diodes (GCD) which can achieve the near zero turn-on voltage were compared with the conventional PN-diode's (PND) and the Schottky Barrier Diode's (SBD). The results of the measurement and the theoretical calculations show that the on-resistance of the GCD could be less than the PND's and also the SBD's...
This report describes the fundamentals of the bridge RF rectifier with an impedance transformer. The rectifier allows full-wave-rectification with no additional circuit, enabling further downsizing and integration of the circuit. To improve the rectification efficiency, an impedance transformer is added between the input port and the bridge diode. From this configuration, we have derived rectification...
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