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We report on the incorporation of thin organic layers as part of GaN/InGaN blue light emitting diodes. The integration of two such contrasting classes of materials as electronic part of a single device structure may offer new opportunities in the design of flexible optoelectronic devices.
We report on study of GaN/InGaN-organic semiconductor heterostructures where electronic transport in planar junction structures shows electron or/and hole injection across the interfaces resulting e.g. light emission from the nitride quantum wells.
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