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The TDDB failure mechanism of high-k dielectric/metal gate (HK/MG) CMOSFETs on DC and AC stress conditions are investigated in comparison to poly-Si/SiON. All devices under unipolar AC stress exhibit longer failure time (tbd) as frequency increases. In case of HK/MG, the SILC behavior has been attributed to the bulk transient charge trapping by pre-existing defects in HK. Since trapped charges in...
We report on study of GaN/InGaN-organic semiconductor heterostructures where electronic transport in planar junction structures shows electron or/and hole injection across the interfaces resulting e.g. light emission from the nitride quantum wells.
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