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Deep UV (DUV) light-emitting diodes (LEDs) are finding increased application in many areas including water purification and sterilization. Sub-270 nm emission is ideal for these applications since bacterial DNA absorbs strongly in this wavelength regime. To extract high energy photons (∼5 eV), the LED cladding regions must be transparent and therefore consist of high Aluminum content (>60%) n-...
Recently, Ga2O3 has become an attractive material for both power electronic and optoelectronic device applications since large-size electronic-grade Ga2O3 substrates can be readily produced by melt-grown methods. Furthermore, high quality epitaxy and n-type doping schemes have been demonstrated [1, 2]. Due to its ultra-wide band gap (∼4.5–4.9 eV), Ga2O3 is estimated to have a critical breakdown field...
GaN MOSHEMT or MOSFET on top of conducting (drift layer and drain electrode) layers is a building block for vertical GaN VDMOS power transistors. GaN MOSHEMTs incorporating a polarization-doped p-AlGaN layer as the back barrier on top of conducting layers is named as PolarMOSH. In this work, we present a comparative study of PolarMOSH fabricated on SiC and free-standing GaN substrates. PolarMOSH wafers...
Owing to the large bandgap, breakdown electric field (Eb) and high carrier mobility, wide-bandgap semiconductor (e.g. SiC and GaN) based power devices have been extensively studied for next-generation power-switching applications [1-2]. Recently, a new wide-bandgap oxide semiconductor, gallium oxide (β-Ga2O3), has attracted attention for power-switching applications because it has an extremely large...
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